roducts., one. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon npn power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2SC4303 description ? collector-emitter breakdown voltage- : v(br)ceo= 800v(min) ? high switching speed applications ? designed for horizontal deflection output applications. absolute maximum ratings(ta=25c) symbol vcbo vceo vebo lo icm ib pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current-continuous collector power dissipation @tc=25'c junction temperature storage temperature value 1400 800 7 6 12 3 80 150 -55-150 unit v v v a a a w 'c 'c f rim 1.ba3e 2. collector 3. emitter to-3pml package 1 2 ;. '/ ? *o i" a i1 h k* t ~- c *- ^ bm_ 7"s"" f-. , 't '' ' ' ' \ j 1 .;, ;? .?:*v*.\ " ' z *- -*- g "*? "*~l -rrj -.i- dim a b c d f g h j k l n q r s u v z mm win 19.90 15.90 5.50 0.90 3.30 2.90 5.90 0.595 22.30 1.90 10.80 4.90 3.75 3.20 9.90 4.70 1.90 max 20.10 16.10 5.70 1.10 3.50 3.10 6.10 0.605 22.50 2.10 11.00 5,10 3.95 3.40 10.10 4.90 2.10 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-comluctors is believed to be both accurate and reliable at the time of going to press. however, n.i semi-coiiductors assumes no responsibility for any errors or omissions discovered in its iise. " nj seiui-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistor 2SC4303 electrical characteristics tj=25'c unless otherwise specified symbol v(br)ceo vce(sat) vee(sat) icbo iebo hfe fi parameter collector-emitter breakdown voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain current-gain ? bandwidth product conditions lc= 10ma; ib= 0 lc= 2.5a; ls= 0.5a lc= 2.5a; ib= 0.5a vcb=1200v;ie=0 veb= 7v; lc= 0 lc= 2.5a; vce= 4v ie= -0.5a; vce= 12v min 800 6 typ. 4 max 1.0 1.5 100 100 unit v v v ua ua mhz switching times tstg tf storage time fall time lc=2.5a;lbi=0.5a;lb2=-1a; vcc= 250v; rl= 1000 4.0 0.3 n s y s
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